onsemi NVMFS6H864NLWFT1G 100V MOSFET: Datasheet, Pinout, and Application Circuit Guide
The NVMFS6H864NLWFT1G from onsemi is a state-of-the-art N-Channel power MOSFET engineered using the advanced SupreMOS® technology. This 100V, 60A device is designed for high-efficiency power conversion applications, offering an exceptional blend of low on-resistance and fast switching performance. Its robust characteristics make it an ideal choice for demanding environments in automotive, industrial, and computing systems.
Key Datasheet Specifications and Features
A deep dive into the datasheet reveals the core strengths of this component. Its most notable feature is its extremely low typical on-resistance (RDS(on)) of just 8.0 mΩ at 10 V (VGS). This low RDS(on) is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in end applications.
Other vital specifications include:
Continuous Drain Current (ID): 60A at TC = 25°C
Drain-to-Source Voltage (VDSS): 100V
Gate Threshold Voltage (VGS(th)): 2.5V (typical)
Low Gate Charge (QG): 60 nC (typical), enabling fast switching speeds and reducing driver losses.
Avalanche Energy Rated: This provides an added layer of ruggedness and reliability against voltage transients.
100% Rg and UIS Tested: Ensures consistency and performance reliability across all production units.
Qualified for AEC-Q101: This certification confirms its suitability for automotive applications, where components must endure harsh operating conditions.
Pinout Configuration (TO-Leadless (FL))
The NVMFS6H864NLWFT1G is housed in a space-saving and thermally efficient TO-Leadless (FL) package. This package is designed for superior power dissipation and is ideal for high-density PCB designs. The pinout is straightforward:
Pin 1 (Gate): The control pin. A voltage applied between the Gate and Source controls the flow of current between the Drain and Source.
Pins 2, 3, 4, 5, 6, 7 (Drain): These pins are internally connected to the Drain terminal of the MOSFET. The multiple connections help to minimize parasitic inductance and handle high current.
The large exposed pad (Thermal Pad) at the bottom is also the Drain connection. This pad is crucial for transferring heat from the silicon die to the PCB. It must be soldered to a large copper pour (a thermal relief) on the PCB to maximize the device's power handling capability.
Application Circuit Guide: A Synchronous Buck Converter Example
One of the most common applications for this MOSFET is in switching power supplies, such as a synchronous buck converter, which steps down a higher DC voltage to a lower one with high efficiency.
In this circuit:
1. High-Side Switch (Control FET): The NVMFS6H864NLWFT1G can be used in this position. Its fast switching speed and low gate charge are beneficial here to minimize switching losses during the rapid on/off transitions.
2. Low-Side Switch (Synchronous Rectifier FET): This MOSFET is also an excellent candidate for the low-side switch. Its extremely low RDS(on) is the key parameter here, as it conducts for a significant portion of the switching cycle. Minimizing voltage drop across it during conduction is paramount for achieving peak efficiency.
Design Considerations:
Gate Driving: A dedicated MOSFET driver IC is highly recommended to provide the strong current needed to quickly charge and discharge the high-capacitance gate. This ensures sharp switching edges and keeps the MOSFET in the saturated region as much as possible.
PCB Layout: The PCB layout is critical for high-frequency switching performance. The loop formed by the high-side FET, low-side FET, and input capacitors must be as small as possible to reduce parasitic inductance. The thermal pad must be connected to a large ground plane with multiple vias to act as a heatsink.
Protection: Incorporate necessary protection features like over-current sensing, under-voltage lockout (UVLO) for the gate driver, and thermal monitoring to ensure system reliability.
ICGOOODFIND: The onsemi NVMFS6H864NLWFT1G stands out as a high-performance, highly reliable power switch perfectly suited for modern high-current DC-DC converters. Its industry-leading low RDS(on) within a compact package, combined with its automotive-grade qualification, makes it a superior choice for designers aiming to maximize power density and efficiency in demanding applications like 48V battery systems, motor control, and server power supplies.
Keywords: Power MOSFET, SupreMOS®, Low RDS(on), Automotive AEC-Q101, Synchronous Buck Converter
