Infineon IAUT300N10S5N015ATMA1 100V OptiMOS 5 Power MOSFET: Powering the Next Generation of High-Efficiency Automotive Systems

The relentless drive towards electrification in the automotive industry demands power semiconductor solutions that deliver uncompromising efficiency, robustness, and reliability. At the forefront of this revolution is Infineon Technologies' IAUT300N10S5N015ATMA1, a 100V OptiMOS™ 5 Power MOSFET engineered specifically to meet the stringent requirements of modern automotive applications. This device is not merely a component; it is a pivotal enabler for systems where energy efficiency and power density are paramount.

Unmatched Efficiency and Performance

Built on Infineon’s advanced OptiMOS™ 5 technology, this N-channel MOSFET sets a new benchmark for performance. Its standout feature is its exceptionally low figure-of-merit (R DS(on) x Q G), which directly translates to minimized conduction and switching losses. In practical terms, this means:

Higher system efficiency, leading to extended range for electric vehicles (EVs) and reduced heat generation.

The ability to operate at higher switching frequencies, allowing for the use of smaller passive components like inductors and capacitors, thereby increasing power density and reducing overall system size and weight.

Designed for the Demanding Automotive Environment

The part number "IAU" signifies its qualification as an AEC-Q101 compliant device, ensuring it meets the rigorous quality and reliability standards for automotive applications. It is engineered to thrive in the harsh under-the-hood environment, capable of withstanding wide temperature variations, mechanical stress, and humidity. Furthermore, its 100V drain-source voltage (V DS) rating provides a comfortable safety margin and robust overvoltage protection in 48V mild-hybrid systems (MHEVs), battery management systems (BMS), and DC-DC converters, making it a versatile choice for various powertrain and platform architectures.

Key Application Areas

The combination of high efficiency and automotive-grade robustness makes the IAUT300N10S5N015ATMA1 ideal for a wide spectrum of critical functions:

48V MHEV Systems: Central to high-efficiency DC-DC conversion between 48V and 12V networks and controlling belt-start generators.

Electric Power Steering (EPS): Provides the precise and reliable power switching needed for safety-critical steering systems.

Battery Disconnect Switches (BDS): Its low R DS(on) ensures minimal power loss in the path between the battery and the load, which is crucial for maximizing energy availability.

On-Board Chargers (OBC) and DC-DC Converters: Enhances the charging efficiency and power management in full-bridge and synchronous rectifier topologies.

Conclusion and ICGOOODFIND

Infineon's IAUT300N10S5N015ATMA1 exemplifies the innovation required to advance automotive electrification. By offering a superior blend of ultra-low power loss, high power density, and proven automotive reliability, it provides engineers with a top-tier solution to design more efficient, compact, and powerful systems.

ICGOOODFIND: The Infineon IAUT300N10S5N015ATMA1 OptiMOS 5 MOSFET is a high-performance, automotive-qualified power switch that is instrumental in optimizing efficiency and enabling compact designs in 48V MHEVs, EPS, and other critical automotive applications, solidifying Infineon's leadership in power semiconductors.

Keywords:

Automotive-Grade MOSFET

High-Efficiency

OptiMOS 5 Technology

48V Mild-Hybrid System

Low R DS(on)